发明名称 縦型半導体素子を備えた半導体装置
摘要 <p><P>PROBLEM TO BE SOLVED: To suppress loss of charge balance while obtaining a structure that suppresses falling of a drift layer when a trench for forming a superjunction structure is formed. <P>SOLUTION: Trenches 2a formed in an n-type drift layer 2 are not made merely linear, but shifted in a direction perpendicular to a length direction in the middle of the length direction. As compared with trenches 2a which are all made linear, the n-type drift layer 2 left between the trenches 2a is increased in strength to suppress the falling of the n-type drift layer 2. This structure is constituted by shifting the trenches 2a in the direction perpendicular to the length direction, so that n-type regions 2b and p-type regions 3 are equalized in volume. Therefore, the loss of charge balance can be suppressed while the falling of the n-type drift layer 2 can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5672767(B2) 申请公布日期 2015.02.18
申请号 JP20100113387 申请日期 2010.05.17
申请人 发明人
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
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