发明名称 |
A METHOD FOR MANUFACTURING A SEMICONDUCTOR METHOD DEVICE BASED ON EPITAXIAL GROWTH. |
摘要 |
This invention relates to a method for manufacturing a semiconductor device and semiconductor manufactured thereby, including growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate that can be used as light emitting and photovoltaic device. |
申请公布号 |
EP2837021(A1) |
申请公布日期 |
2015.02.18 |
申请号 |
EP20130776142 |
申请日期 |
2013.03.28 |
申请人 |
TANDEM SUN AB |
发明人 |
SUN, YANTING;LOURDUDOSS, SEBASTIAN |
分类号 |
H01L21/205;H01L31/0216;H01L31/0224;H01L31/0304;H01L31/036;H01L31/0687;H01L31/07;H01L31/0725;H01L31/0735;H01L31/107;H01L31/18;H01S5/323 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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