BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER
摘要
<p>A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N−region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.</p>
