| 摘要 |
1,260,924. Semi-conductor compounds. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 19 March, 1969 [22 March, 1968], No. 14385/69. Heading C1A. A rod of semi-conductive A III B V compound is manufactured by gradual crystallization in a closed reactor, characterized in that a small quantity of boron oxide (preferably 0À2 to 3% by wt. based on the wt. of the least volatile component) is introduced into: the reactor and is kept at the temperature of the: most. volatile component during the crystallization. In a preferred embodiment, gallium arsenide is manufactured with the boron oxide at the temperature of at least the melting point of the gallium' arsenide. The Fig: shows, as. the: preferred embodiment, a closed reactor, 1, preferably of quartz, divided into two sections, 2 and 3, by the diaphragm 4 in which there is a connecting-passage, 11; boat, 5, contains gallium, 6, at a temperature of 1270‹ C.; boats, 7 and 9, respectively contain arsenic: (with a weight greater than that of the gallium) and boron oxide at, at least 610‹ C. After maintaining these temperatures for a length of time sufficient, for the completion of the reaction the space, 2, is gradually cooled in a conventional manner.
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