发明名称 FIELD EFFECT TRANSISTOR, DEVICE INCLUDING THE TRANSISTOR, AND METHODS OF FORMING AND USING SAME
摘要 The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.
申请公布号 EP2836828(A1) 申请公布日期 2015.02.18
申请号 EP20130719651 申请日期 2013.04.09
申请人 TAKULAPALLI, BHARATH;INANOBIO LLC 发明人 TAKULAPALLI, BHARATH;ABHINAV, JAIN
分类号 G01N27/414;G01N33/487 主分类号 G01N27/414
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