METHOD FOR VAPOR-PHASE EPITAXIAL GROWTH OF SEMICONDUCTOR FILM

摘要

A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400°C from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 µmol per mimute per 1 cm 2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.