| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide techniques in which hydrogen can sufficiently penetrate to a damaged portion of a semiconductor constituting a device during hydrogen annealing, after electron beam irradiation or the like to lead to damage recovery, and to suppress deterioration of a surface electrode. <P>SOLUTION: A first metal film 12a of a barrier metal 12, contained in a surface electrode 11 formed over the entire cell region where IGBT is formed, is constituted, not by titanium (Ti), but rather by a metal material of group VIII, such as nickel (Ni) or cobalt (Co). Thus, hydrogen can penetrate to a silicon surface damaged by electron beam irradiation or the like during hydrogen annealing. Furthermore, the metal material constituting the first metal film 12a of the barrier metal 12 can be prevented from combining with hydrogen. Accordingly, hydrogen can penetrate the damaged portion of the silicon surface sufficiently during hydrogen annealing, so that damage recovery can be made and that deterioration of the surface electrode 11 can be suppressed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
