Graded band gap pn homojunction formation method in silicon

摘要

The invention relates to technical physics and can be used in the production of light-absorbing and light-emitting semiconductor devices. The technical problem solved by the present invention is to develop a simple method for formation of a graded band gap p-n homojunction in silicon, which effectively absorbs and emits light in a broad spectral range, including visible light. The method for formation of a graded band gap p-n homojunction in silicon comprises a step of formation of a p-n junction in a p-type conductivity silicon monocrystal having a resistivity of 1 to 10 ©€¢cm, surface roughness of the monocrystal being less than 1.6 nm, by irradiating its surface with a laser radiation with an absorption coefficient in silicon no less than 10 6 cm -1 , the laser radiation doses being between 30 and 750 mJ/cm 2 , and the length of the pulses being between 1 and 10 ns, to form a graded band gap p-n homojunction with a thickness of the n-type layer equal to or less than 26 nm on the surface layer of the silicon monocrystal.