Vapor deposition device and vapor deposition method

摘要

A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.

主权项

1. A vapor deposition device for depositing a silicon film on a surface of a substrate, the device comprising:
a vapor deposition chamber; a heating chamber; a mixing chamber; a first reservoir for storing trichlorosilane gas; and a second reservoir for storing silane gas that reacts with hydrochloric acid gas, wherein the heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas supplied from the first reservoir and then supplies the heated gas to the mixing chamber, the mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber, and a temperature in the heating chamber is higher than a temperature in the mixing chamber.