Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages

摘要

A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer.

主权项

1. A semiconductor chip comprising:
a substrate having a first surface and a second surface; a plurality of through silicon vias (TSVs) which penetrate the substrate and protrude above the second surface of the substrate; a polymer pattern layer on the second surface of the substrate and at least partially surrounding side surfaces of protruding portions of each of the TSVs, the polymer pattern layer including a first portion and a second portion that protrudes above the first portion; and a plated pad on the polymer pattern layer and on the protruding portions of each of the TSVs, wherein a top surface of the second portion of the polymer pattern layer is higher above the second surface of the substrate than is a top surface of the plated pad, and wherein the second portion of the polymer pattern layer includes a first protrusion that is located between two adjacent ones of the plurality of TSVs, wherein the first protrusion has a non-planar top surface.