| 发明名称 | Integrated structure with a silicon-through via | ||
| 摘要 | An integrated structure with a silicon-through via includes a substrate, a through-silicon via penetrating the substrate, a conductive protective structure surrounding the through-silicon via and a first and a second conductive dummy patterns with different shapes disposed between the through-silicon via and the conductive protective structure. | ||
| 申请公布号 | US8957504(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201313833786 | 申请日期 | 2013.03.15 |
| 申请人 | IP Enval Consultant Inc. | 发明人 | Chao-Yuan Huang;Yueh-Feng Ho;Ming-Sheng Yang;Hwi-Huang Chen |
| 分类号 | H01L29/40;H01L23/48;H01L23/52;H01L23/544 | 主分类号 | H01L29/40 |
| 代理机构 | Kamrath IP Lawfirm, P.A. | 代理人 | Kamrath Alan D.;Kamrath IP Lawfirm, P.A. |
| 主权项 | 1. An integrated structure with a silicon-through via, comprising: a substrate; a through-silicon via penetrating the substrate, the through-silicon via comprising a through-silicon hole, a dielectric layer lining on a wall of the through-silicon hole and a conductive material filled in the through-silicon hole; a conductive protective structure surrounding the through-silicon via; and a first and a second conductive dummy patterns with different shapes disposed between the through-silicon via and the conductive protective structure, wherein the first and second conductive dummy patterns are physically separated from the through-silicon via. | ||
| 地址 | Hsinchu TW | ||