发明名称 Electroluminescence display device
摘要 Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.
申请公布号 US8957424(B2) 申请公布日期 2015.02.17
申请号 US201414223366 申请日期 2014.03.24
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Ono Koji;Suzawa Hideomi;Arao Tatsuya
分类号 H01L27/14;H01L33/08;H01L27/12;H01L29/423;H01L29/49;H01L29/66;H01L29/786;H01L33/62 主分类号 H01L27/14
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising: a first substrate; a second substrate over the first substrate, the second substrate being smaller than the first substrate so that the first substrate has a first region which overlaps with the second substrate and a second region which does not overlap with the second substrate; a pixel portion in the first region, the pixel portion comprising a plurality of pixels between the first substrate and the second substrate; a wiring over the first substrate, the wiring extending from the first region to the second region; a flexible printed circuit connected to the wiring in the second region through an anisotropic conductive material; a filler between the pixel portion and the second substrate, the filler including a drying agent; and a sealant covering the flexible printed circuit, a part of the second region which does not overlap with the flexible printed circuit, and a side surface of the second substrate, wherein the plurality of pixels each comprise: a transistor;a transparent anode electrically connected to the transistor;a white-emissive EL layer over the transparent anode, the white-emissive EL layer having a lamination structure of a plurality of layers and being configured to be coupled with a color filter to undergo color display; anda cathode over the white-emissive EL layer, the cathode comprising aluminum so that light emitted in the white-emissive EL layer is extracted through the first substrate.
地址 Atsugi-shi, Kanagawa-ken JP