Double-sided luminescent organic light emitting device and manufacturing method thereof

摘要

Disclosed are a double-sided luminescent organic light emitting device and the manufacturing method thereof. The double-sided luminescent organic light emitting device comprises a transparent substrate (21), an anode (22), a transparent cathode (25), and at least two organic light emitting structures (23a, 23b) and at least a charge-generation layer (24) set between the anode (22) and the transparent cathode (25), and the charge-generation layer (24) is set between the two neighboring organic light emitting structures (23a, 23b), the charge-generation layer (24) and the organic light emitting structures (23a, 23b) are alternately arranged. The charge-generation layer (24) includes an n-type semiconductor layer (241) and a p-type semiconductor (242) layer combined with the n-type semiconductor layer. Said double-sided light emitting organic light emitting device requires low driving current, and has high luminescence efficiency, high brightness, and high light extraction efficiency. In addition, said device enables nearly 360 degrees omnidirectional illumination, enlarges the illumination area and the application range, and has long lifetime, simple preparation procedures and low production cost.

主权项

1. A double-sided light emitting organic electroluminescent device, which comprises a light-transmissive substrate, an anode, a light-transmissive cathode, wherein there are at least two organic electroluminescent structures and at least one light-transmissive charge generation layer arranged between the anode and the light-transmissive cathode;
the light-transmissive charge generation layer is arranged between the two neighboring organic electroluminescent structures and conjugated thereto, and the light-transmissive charge generation layer and the organic electroluminescent structure are alternatively arranged and combined together; the light-transmissive charge generation layer comprises an N-type semiconductor layer and a P-type semiconductor layer directly connected to the N-type semiconductor layer, wherein the P-type semiconductor layer is a metal oxide layer.