| 发明名称 | Multilayer structure, and electrode for electrical circuit using the same | ||
| 摘要 | A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film, the transparent conductive thin film having a thickness of 35 nm or less. | ||
| 申请公布号 | US8957313(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US200712162028 | 申请日期 | 2007.01.16 |
| 申请人 | Idemitsu Kosan Co., Ltd. | 发明人 | Umeno Satoshi;Honda Katsunori;Inoue Kazuyoshi;Matsubara Masato |
| 分类号 | H01B13/00;C23C14/08;G02F1/1343;H01J9/02;G02F1/1362;H01L51/52 | 主分类号 | H01B13/00 |
| 代理机构 | Millen, White, Zelano & Branigan, P.C. | 代理人 | Millen, White, Zelano & Branigan, P.C. |
| 主权项 | 1. A multilayer structure comprising: a glass substrate; and a multilayer thin film on the glass substrate; wherein the multilayer thin film comprises an amorphous transparent conductive thin film and a molybdenum metal thin film, wherein the transparent conductive thin film is in contact with the molybdenum metal thin film, and wherein the transparent conductive thin film comprises a thin film containing indium oxide and tin oxide; a thin film containing indium oxide, tin oxide, and zinc oxide; or a thin film containing indium oxide and an oxide of a rare earth element, wherein the transparent conductive thin film and molybdenum metal thin film are sequentially formed by sputtering, and wherein the transparent conductive thin film having a thickness of 25 nm to 1 nm. | ||
| 地址 | Tokyo JP | ||