发明名称 |
Magnetic memory |
摘要 |
A magnetic memory according to an embodiment includes: a magnetic nanowire; first insulating layers provided on a first surface of the magnetic nanowire, each of the first insulating layers having a first and second end faces, a thickness of the first insulating layer over the first end face being thicker than a thickness of the first insulating layer over the second end face; first electrodes on surfaces of the first insulating layers opposite to the first surface; second insulating layers on the second surface of the magnetic nanowire, each of the second insulating layers having a third and fourth end faces, a thickness of the second insulating layer over the third surface being thicker than a thickness of the second insulating layer over the fourth end face; and second electrodes on surfaces of the second insulating layers. |
申请公布号 |
US8958241(B2) |
申请公布日期 |
2015.02.17 |
申请号 |
US201314021096 |
申请日期 |
2013.09.09 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Kondo Tsuyoshi;Morise Hirofumi;Nakamura Shiho;Shimada Takuya;Fukuzumi Yoshiaki;Aochi Hideaki |
分类号 |
G11C11/14;G11C11/02;B82Y10/00 |
主分类号 |
G11C11/14 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A magnetic memory comprising:
a magnetic nanowire including a first surface and a second surface being opposite to the first surface; a plurality of first insulating layers provided onto the first surface of the magnetic nanowire along a first direction in which the magnetic nanowire extends, each of the first insulating layers having a first end face that intersects the first direction, and a second end face being opposite to the first end face and arranged to be spaced apart from the first end face along the first direction, a thickness of the first insulating layer over the first end face in a direction perpendicular to the first surface being thicker than a thickness of the first insulating layer over the second end face; a plurality of first electrodes provided onto surfaces of the first insulating layers opposite to the first surface; a plurality of second insulating layers provided onto the second surface of the magnetic nanowire along the first direction, each of the second insulating layers having a third end face that intersects the first direction and a fourth end face being opposite to the third end face and arranged to be spaced apart from the third end face along the first direction, a thickness of the second insulating layer over the third end face in the direction perpendicular to the second surface being thicker than a thickness of the second insulating layer over the fourth end face; and a plurality of second electrodes provided onto surfaces of the second insulating layers opposite to the second surface. |
地址 |
Minato-ku JP |