| 发明名称 | Self light-emitting device | ||
| 摘要 | To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105). | ||
| 申请公布号 | US8957584(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201213366838 | 申请日期 | 2012.02.06 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Tsutsui Tetsuo;Konuma Toshimitsu;Mizukami Mayumi |
| 分类号 | H01L33/12;H01L51/52;G02F1/1335 | 主分类号 | H01L33/12 |
| 代理机构 | Husch Blackwell LLP | 代理人 | Husch Blackwell LLP |
| 主权项 | 1. A light-emitting element comprising: an opaque electrode over a substrate; a member covering an edge portion of the opaque electrode; an EL layer over the opaque electrode; a transparent electrode over the EL layer; a spacer over and in contact with the transparent electrode; and a cover material over and in contact with the spacer, wherein the spacer overlaps with the EL layer and the opaque electrode, and wherein the EL layer and the transparent electrode overlap with the member. | ||
| 地址 | JP | ||