Method of gap filling in a semiconductor device

摘要

PURPOSE: A gap filling method for a semiconductor device is provided to gap-fill between fine patterns in the device without voids by forming an atomic layer deposition(ALD) insulation layer and treating the ALD insulation layer with plasma. CONSTITUTION: A plurality of patterns forms a plurality of gaps on a semiconductor substrate(210). An insulation layer is deposited on the upper side of the semiconductor substrate by an ALD process. The substrate is treated with high density plasma under a reduction gas atmosphere in order to form a pre-set insulation layer shape(221). The thickness of the insulation layer which is formed on the upper side of the gap is thinner than the thickness of the insulation layer which is formed on the lower side of the gap.