发明名称 Method and apparatus for optimizing reference voltages in a nonvolatile memory
摘要 A system including a divider module, a read module, a counting module, and a reference voltage setting module. The divider module is configured to select a voltage range in which to adjust a reference voltage used to read memory cells of nonvolatile memory, and to divide the voltage range into a plurality of bins, where each of the bins is defined by a pair of voltages. The read module is configured to perform a plurality of read operations by applying, to the memory cells, the voltages defining the bins. The counting module is configured to generate, in each of the read operations, counts of a number of memory cells having threshold voltages in each of the bins. The reference voltage setting module is configured to adjust, based on the counts, the reference voltage to a voltage selected from one or more voltages associated with the bins.
申请公布号 US8958250(B2) 申请公布日期 2015.02.17
申请号 US201414329277 申请日期 2014.07.11
申请人 Marvell World Trade Ltd. 发明人 Yang Xueshi
分类号 G11C11/34;G11C16/28;G11C16/10;G11C16/30;G11C16/12 主分类号 G11C11/34
代理机构 代理人
主权项 1. A system comprising: a divider module configured to select a voltage range in which to adjust a reference voltage used to read memory cells of a nonvolatile memory, anddivide the voltage range into a plurality of bins, wherein each of the bins is defined by a pair of voltages; a read module configured to perform a plurality of read operations by applying, to the memory cells, the voltages defining the bins; a counting module configured to generate, in each of the read operations, counts of a number of memory cells having threshold voltages in each of the bins; and a reference voltage setting module configured to adjust, based on the counts, the reference voltage to a voltage selected from one or more voltages associated with the bins.
地址 St. Michael BB