发明名称 Magnetic device with thermally-assisted switching
摘要 A magnetic thermally-assisted switching device includes a reference layer, a storage layer magnetised along a variable direction, a spacer that separates the reference layer and the storage layer, and magnetically decouples them, a device for heating the pinning layer so that, during heating, the temperature of the pinning layer exceeds its blocking temperature such that the direction of magnetisation of the storage layer is no longer pinned, a device for applying a writing magnetic torque tending to align the magnetisation of the storage layer along one of two stable magnetisation directions once the blocking temperature is reached. The device also includes a device for applying a magnetic polarisation field at least during the heating phase before the blocking temperature is reached such that the direction of magnetisation of the storage layer is always along the direction of the magnetic polarisation field at the moment that the blocking temperature is reached.
申请公布号 US8958240(B2) 申请公布日期 2015.02.17
申请号 US201313939441 申请日期 2013.07.11
申请人 Commissariat À l'Énergie Atomique et aux Énergies Alternatives 发明人 Dieny Bernard;Sousa Ricardo
分类号 G11C11/16 主分类号 G11C11/16
代理机构 Pillsbury Winthrop Shaw Pittman LLP 代理人 Pillsbury Winthrop Shaw Pittman LLP
主权项 1. Magnetic device with thermally-assisted switching comprising: a first magnetic layer; a second magnetic layer that has a variable direction of magnetisation; a spacer that separates the first magnetic layer and the second magnetic layer and magnetically decouples them; an antiferromagnetic pinning layer in contact with the second magnetic layer, the antiferromagnetic layer being capable of pinning the direction of magnetisation of the second magnetic layer, said second magnetic layer having at least two storage levels corresponding to two stable pinned directions of magnetisation; a heating device configured to heat said pinning layer such that, during heating, the temperature of said pinning layer exceeds its blocking temperature such that the direction of magnetisation of said second magnetic layer is no longer pinned; a device configured to apply a writing magnetic torque tending to align the magnetisation of the second magnetic layer along one of the two stable magnetisation directions once said blocking temperature is reached; a magnetic polarisation field generating device configured to apply a magnetic polarisation field at least during the heating phase before the blocking temperature is reached such that the direction of magnetisation of said second magnetic layer is always along the direction of said magnetic polarisation field at the moment that the blocking temperature is reached.
地址 Paris FR