Semiconductor device

摘要

A semiconductor device is disclosed that includes an insulation substrate, a metal wiring layer, a semiconductor element, a heat sink, and a stress relaxation member located between the insulation substrate and the heat sink. The heat sink has a plurality of partitioning walls that extend in one direction and are arranged at intervals. The stress relaxation member includes a stress absorbing portion formed by through holes extending through the entire thickness of the stress relaxation member. Each hole is formed such that its dimension along the longitudinal direction of the partitioning walls is greater than its dimension along the arranging direction of the partitioning walls.

主权项

1. A semiconductor device comprising:
an insulation substrate having a first surface and a second surface that is opposite to the first surface; a first metal plate joined to the first surface of the insulation substrate; a semiconductor element joined to the first metal plate; a second metal plate joined to the second surface of the insulation substrate; and a heat sink for cooling the semiconductor element, the heat sink being coupled to the second metal plate such that heat can be conducted, wherein the heat sink includes a case portion and a plurality of partitioning walls located in the case portion, the partitioning walls defining a plurality of cooling medium passages, wherein the case portion has a surface that faces the second metal plate, which the surface includes a joint region, to which the second metal plate is joined, and a non-joint region, to which the second metal plate is not joined, wherein each partitioning wall includes a first end facing the second metal plate and a second end opposite to the first end, wherein the partitioning walls include first partitioning walls and second partitioning walls, adjacent pairs of the first and second partitioning walls, and the outermost second partitioning walls and side walls of the case portion defining the cooling medium passages, the first end of each first partitioning wall being joined to an inner surface of the case portion, the second end of each first partitioning wall not being joined to an inner surface of the case portion, and the first and second ends of each second partitioning wall being joined to the inner surfaces of the case portion, wherein, among the first and second partitioning walls, at least one or more of the first partitioning walls pass through a region in the case portion that corresponds to the joint region, and wherein, among the first and second partitioning walls, only one or more of the second partitioning walls pass through only a region in the case portion that corresponds to the non-joint region.