Magnetron sputtering apparatus and film forming method

摘要

A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields.

主权项

1. A magnetron sputtering apparatus in which a target is disposed opposite to a substrate to be processed mounted in a vacuum chamber and magnet members are disposed on a back surface of the target, the apparatus comprising:
a power supply unit configured to apply a voltage to the target; a plurality of magnetic pole array sets, each of which includes an outer ring-shaped magnetic pole array formed of magnetic poles arranged in a circumferential direction of the substrate and an inner ring-shaped magnetic pole array formed of magnetic poles arranged in the circumferential direction of the substrate inwardly of the outer ring-shaped magnetic pole array, arranged concentrically with each other, each of the magnetic pole array sets serving to generate a cusp magnetic field between the outer and the inner ring-shaped magnetic pole array and allow electrons to drift in the circumferential direction of the substrate; an operating unit configured to move the inner and/or the outer ring-shaped magnetic pole array of each of the magnetic pole array sets to temporally switch the magnetic pole array set which generates the cusp magnetic field; and a rotation unit configured to rotate the magnetic pole array sets along the circumferential direction of the substrate.