| 发明名称 | Semiconductor device and display apparatus | ||
| 摘要 | A semiconductor device according to the present invention includes: a gate electrode (62) of a thin film transistor (10) and an oxygen supply layer (64), the gate electrode (62) and the oxygen supply layer (64) being formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode (62) and the oxygen supply layer (64); an oxide semiconductor layer (68) of the thin film transistor (10), the oxide semiconductor layer (68) being formed on the gate insulating layer (66); and a source electrode (70S) and a drain electrode (70d) of the thin film transistor (10), the source electrode (70S) and the drain electrode (70d) being formed on the gate insulating layer (66) and the oxide semiconductor layer (68). | ||
| 申请公布号 | US8957418(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201113992367 | 申请日期 | 2011.12.06 |
| 申请人 | Sharp Kabushiki Kaisha | 发明人 | Moriguchi Masao;Kanzaki Yohsuke;Takanishi Yudai;Kusumi Takatsugu;Matsukizono Hiroshi |
| 分类号 | H01L21/46;H01L27/15;H01L27/12;H01L29/786;H01L29/49;H01L29/66;H01L27/32;G02F1/1368 | 主分类号 | H01L21/46 |
| 代理机构 | Keating & Bennett, LLP | 代理人 | Keating & Bennett, LLP |
| 主权项 | 1. A semiconductor device having a thin film transistor, comprising: a gate electrode of the thin film transistor, the gate electrode being formed on a substrate; a gate insulating layer formed on the gate electrode; an oxygen supply layer formed on the gate insulating layer; an oxide semiconductor layer of the thin film transistor, the oxide semiconductor layer formed on the oxygen supply layer; and a source electrode and a drain electrode of the thin film transistor, the source electrode and the drain electrode being disposed on the oxide semiconductor layer, wherein, an aperture is formed in the oxygen supply layer; and the oxide semiconductor layer is in contact with the gate insulating layer in the aperture of the oxygen supply layer. | ||
| 地址 | Osaka JP | ||