P-type graphene base transistor

摘要

A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.

主权项

1. An electronic component comprising a graphene hot hole transistor comprising:
a layer stack including an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein the layer stack further comprises an emitter barrier layer that is arranged between the base layer and the emitter layer, and a collector barrier layer that is arranged between the base and the collector layers and adjacent to the graphene layer; either the emitter and collector layers are made of a material having p-type conductivity, or the emitter layer is made of a material having p-type conductivity and the collector layer is made of a material having the electrical conductivity of a metal; and wherein the layer stack is configured to allow a current of holes through the layer stack in a stacking direction pointing from the emitter layer through the base layer to the collector layer, under application of an input voltage that sets a base potential at the base layer below an emitter potential at the emitter layer and that sets a collector potential at the collector layer below the base potential, wherein an amount of said current of holes is controllable by an amount of a potential difference between the base potential and the emitter potential.