| 发明名称 | Infrared detecting element, method for manufacturing infrared detecting element, and electronic device | ||
| 摘要 | The infrared detecting element has a base plate; an insulating film that is provided on the base plate and has a recessed portion surrounding a hollow space; a supporting section that is held by a beam, one end of the beam being fixed to the insulating film, and is located in an area that opposes the hollow space; and an infrared detecting section that is provided on the supporting section and detects infrared rays, in which the recessed portion is covered with a water repellent film that includes polysilicon, and the beam and the supporting section include silicon nitride or silicon carbonitride. | ||
| 申请公布号 | US8957375(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201213601274 | 申请日期 | 2012.08.31 |
| 申请人 | Seiko Epson Corporation | 发明人 | Miyashita Kazuyuki |
| 分类号 | G01J5/34;G01J5/24;G01J5/02;G01J5/08;H01L37/02;G01J5/00 | 主分类号 | G01J5/34 |
| 代理机构 | Global IP Counselors, LLP | 代理人 | Global IP Counselors, LLP |
| 主权项 | 1. An infrared detecting element comprising: a base plate; an insulating film that is provided on the base plate and has a recessed portion; a supporting section that is held by a beam, one end of the beam being fixed to the base plate, and is located above the recessed portion such that a hollow space stands between the supporting section and the recessed portion; and an infrared detecting section that is provided on the supporting section and detects infrared rays, wherein the recessed portion is covered with a water repellent film that includes polysilicon, and the beam and the supporting section include silicon nitride or silicon carbonitride. | ||
| 地址 | Tokyo JP | ||