Solid-state imaging device, manufacturing method of the same, and electronic apparatus

摘要

A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.

主权项

1. A solid-state imaging device comprising:
a pixel having a photodiode area; a buried-type first photodiode formed by ion-implanting impurities using a first side wall of a transmission gate electrode as a mask, the first photodiode including a first area and a second area; a buried-type second photodiode formed in the photodiode area by ion-implanting impurities using the transmission gate electrode as a mask; a floating diffusion area formed by ion-implanting impurities using another side of the transmission gate electrode as a mask; and a second side wall formed on the another side of the transmission gate electrode, wherein,
a low impurity concentration of the second photodiode is closer to the transmission gate than that of a high impurity concentration of the first photodiode, the low impurity concentration being less than that of the high impurity concentration, anda charge storage area is positioned below the first area and the second area of the first photodiode, the charge storage area having an end that is aligned with an end of the first sidewall.