Method of manufacturing semiconductor devices

摘要

A method of manufacturing semiconductor devices includes forming a plurality of patterns spaced apart from each other on a semiconductor substrate, forming a filling layer, not removed in a subsequent process of forming a mask pattern and where the filling layer formed to have a lower height than the plurality of patterns, between the plurality of patterns, forming a mask layer on the entire structure where the filling layer is formed, and forming the mask pattern by removing some of the mask layer so that some of the plurality of patterns is removed.

主权项

1. A method of manufacturing semiconductor devices, comprising
forming a plurality of patterns spaced apart from each other on a semiconductor substrate; forming capping patterns having a U shape between adjacent patterns; forming filling patterns on the capping patterns, wherein the filling patterns have a lower height than a height of the plurality of patterns; forming a mask layer on an entire structure where the filling patterns are formed; forming the mask pattern by removing some of the mask layer so that some of the plurality of patterns is exposed; and implanting impurities into the semiconductor substrate under the filling patterns exposed by the mask pattern.