发明名称 3D STACKED SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THEREOF
摘要 <p>A semiconductor device comprises a semiconductor substrate and a plurality of layers which are layered on the semiconductor substrate vertically. The semiconductor device partitively stores data having a successive address space in adjacent first and second layers among the layers. A first position of the first layer and a second position of the second layer having the divided data are not closed vertically. A heat generated by the repetitive approach regarding the data in the semiconductor device can be dispersed by not closing positions of the layers of the semiconductor device vertically. It can be prevented that a hot spot and a physical trouble are generated in the semiconductor device.</p>
申请公布号 KR20150017453(A) 申请公布日期 2015.02.17
申请号 KR20130093297 申请日期 2013.08.06
申请人 发明人
分类号 H01L23/12;H01L23/48 主分类号 H01L23/12
代理机构 代理人
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