Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element

摘要

A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

主权项

1. A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element,
wherein the projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top, wherein the side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections, and wherein the side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections, wherein a bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection, and wherein the projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of said projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice.