Semiconductor device

摘要

A semiconductor device may reduce a dislocation density and tensile stress by forming a plurality of interlayers between neighboring clad layers. The semiconductor device may include a plurality of clad layers on a substrate and a plurality of interlayers between neighboring clad layers.

主权项

1. A semiconductor device, comprising:
a plurality of clad layers on a substrate; a plurality of interlayers between neighboring clad layers of the plurality of clad layers, wherein the plurality of interlayers include:
a first interlayer formed of Alx0Iny0Ga1-x0-y0N (0≦x0≦1, 0≦y0≦1); anda second interlayer on the first interlayer, the second interlayer formed of a material including one selected from the group consisting of step-graded AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1) and Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N (0≦x1≦1, 0≦x2≦1, 0≦y1≦1, 0≦y2≦1, x1≠x2, y1≠y2) superlattice; andwherein a molar ratio of aluminum (Al) is reduced toward a top portion of the second interlayer formed of step-graded AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1.