发明名称 |
Laminate substrate and method of fabricating the same |
摘要 |
Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AlN layer including the AlN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer. |
申请公布号 |
US8957426(B2) |
申请公布日期 |
2015.02.17 |
申请号 |
US201113985201 |
申请日期 |
2011.05.17 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Sakai Shiro |
分类号 |
H01L29/15;H01L21/36;H01L29/267;H01L21/02;H01L33/00;H01L33/12;H01L29/16;H01L33/32 |
主分类号 |
H01L29/15 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A laminate substrate comprising:
a GaN layer comprising a GaN crystal; and an AlC layer comprising an AlC crystal. |
地址 |
Ansan-si KR |