Semiconductor storage device and manufacturing method of semiconductor storage device

摘要

A semiconductor storage device according to an embodiment comprises a memory cell string in which a plurality of memory cells each having a gate are serially connected to each other. A selective transistor is connected to an end memory cell at an end of the memory cell string. A sidewall film covers a side surface of a gate of the end memory cell and a side surface of a gate of the selective transistor between the end memory cell and the selective transistor. An air gap is provided between the sidewall film of the end memory cell and the sidewall film of the selective transistor.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a gate insulating film disposed above the semiconductor layer, a gate electrode disposed above the gate insulating film; diffusion layers formed in the semiconductor layer at side portions of the gate electrode; and an isolation insulating film disposed in the semiconductor layer at an opposite side of one of the diffusion layers; wherein an upper surface of the isolation insulating film is lower than that of an upper surface of the semiconductor layer, and a step is provided between the upper surface of the isolation insulating film and the upper surface of the semiconductor layer, the device further comprises: a first insulating film provided on a side surface of the step; a second insulating film provided on at least a part of a side surface of the gate electrode; a third insulating film provided on a side surface of the step via the first insulating film and on at least a first part of an upper surface of the isolation insulating film; a fourth insulating film provided on a side surface of the gate electrode via the second insulating film; and a fifth insulating film provided on the third and the fourth insulating films and on a second part of the upper surface of the isolation insulating film.