Thin film transistor and thin film transistor array panel including the same

摘要

A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb).

主权项

1. A thin film transistor comprising:
a gate electrode on a substrate; a source electrode on the gate electrode; a drain electrode at a same layer as the source electrode, and spaced apart from and facing the source electrode; an oxide semiconductor layer between the gate electrode and the source electrode or between the gate electrode and the drain electrode; and a gate insulating layer between the gate electrode and the source electrode or between the gate electrode and the drain electrode, wherein the oxide semiconductor layer comprises a continuous layer of amorphous titanium oxide doped with niobium.