Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and non-transitory computer-readable recording medium

摘要

Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.

主权项

1. A method of manufacturing a semiconductor device, the method comprising forming a nitride film on a substrate by performing a cycle multiple times, the cycle including:
(a) supplying a source gas to the substrate; (b) supplying a plasma-excited hydrogen-containing gas to the substrate; (c) supplying a plasma-excited or thermally excited nitriding gas to the substrate; and (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate, wherein the step (b) is performed in one of a time period after the step (a) and a time period after the step (c), and the step (d) is performed in one of the time period after the step (a) and the time period after the step (c) other than the time period where the step (b) is performed.