| 摘要 |
<p>The present invention relates to a light emitting diode of which a periodic pattern is formed on a transparent electrode. The present invention includes: a substrate; an n-type semiconductor which is disposed on the upper side of the substrate; a cathode which is disposed in a part of the upper side of the n-type semiconductor; a light emitting layer which is disposed on the upper side of the n-type semiconductor except for a part; a p-type semiconductor which is disposed on the upper side of the light emitting layer; a transparent electrode which is disposed on the upper side of the p-type semiconductor; and an anode which is disposed on the upper side of the transparent electrode. The transparent electrode forms the same periodic pattern to be etched repeatedly on the boundary adjacent to an area where the cathode is disposed to expose the p-type semiconductor. The transparent electrode forms the same periodic pattern to be etched repeatedly to be exposed from the complete etching area where is etched as a specific distance from the boundary adjacent to an area where the cathode is disposed to expose the p-type semiconductor.</p> |
