| 摘要 |
<p>A method of forming a silicon-containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises a step of inserting silicon-containing vanes into grooves formed on a grooved surface of an annular carbon template, wherein the grooved surface of the annular carbon template includes an upwardly protruding step at an inner perimeter thereof wherein each groove extends from the inner perimeter to the outer perimeter of the grooved surface. The step of the grooved surface and a protrusion at an end of each silicon-containing vane are surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon-containing vane in each respective groove. Silicon-containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon-containing vane, thereby forming a silicon-containing shell of a predetermined thickness. A portion of the silicon-containing shell is removed and the annular carbon template and the annular carbon member are removed from the silicon-containing shell to leave a silicon-containing confinement ring, wherein the silicon-containing vanes are supported by the silicon-containing shell of the silicon-containing confinement ring.</p> |
