发明名称 Developing method
摘要 A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other.
申请公布号 US8956695(B2) 申请公布日期 2015.02.17
申请号 US201213359388 申请日期 2012.01.26
申请人 SCREEN Semiconductor Solutions Co., Ltd. 发明人 Harumoto Masahiko;Yamaguchi Akira;Hisai Akihiro;Sugiyama Minoru;Kuroda Takuya
分类号 B05D3/12;G03C5/29;G03F7/20;G03F7/30 主分类号 B05D3/12
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A developing method for developing a substrate, comprising: spinning the substrate with a spin holder; discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder; causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate in plan view; and causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate at loci of positions of impingement, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate, wherein the developer discharged from said exhaust ports flows down in bar-shaped streams; wherein the loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other.
地址 Kyoto JP