Semiconductor device and method for manufacturing the same

摘要

In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a base film over a substrate; forming an oxide semiconductor film over the base film; performing a heat treatment so as to release hydrogen from the oxide semiconductor film; forming a pair of electrodes over and in contact with at least a part of the oxide semiconductor film; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode over the oxide semiconductor film with the gate insulating film provided therebetween, wherein the base film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order, wherein the hydrogen capture film comprises an oxynitride film containing indium, and wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.