Method for fabricating a multi-gate device

摘要

A device includes a wafer substrate including an isolation feature, at least two fin structures embedded in the isolation feature, and at least two gate stacks disposed around the two fin structures respectively. A first inter-layer dielectric (ILD) layer is disposed between the two gate stacks, with a dish-shaped recess formed therebetween, such that a bottom surface of the recess is below the top surface of the adjacent two gate stacks. A second ILD layer is disposed over the first ILD layer, including in the dish-shaped recess. The second ILD includes nitride material; the first ILD includes oxide material.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a fin structure and an isolation structure on a wafer substrate, wherein the fin structure is embedded in the isolation structure; forming two gate stacks around the fin structure; depositing a first inter-layer dielectric (ILD) layer over the two gate stacks; removing portions of the first ILD layer, wherein a recess is formed between the two gate stacks; depositing a second ILD layer over the first ILD layer, including in the recess; and removing portions of the second ILD, leaving the second ILD layer in the recess.