发明名称 Electrode for electricity-storing device, electricity-storing device employing such electrode, and method of manufacturing electrode for electricity-storing device
摘要 An electricity-storing device electrode includes a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At at least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle.
申请公布号 US8956763(B2) 申请公布日期 2015.02.17
申请号 US201113318000 申请日期 2011.11.02
申请人 GS Yuasa International Ltd. 发明人 Tanaka Kenji;Matsuo Kazuaki;Tozuka Kazuhide;Okabe Kazuya
分类号 H01M4/64;H01G11/28;H01G11/86;H01M4/04;H01M4/13;H01M4/36;H01M4/62;H01M2/14;H01M10/42;H01M10/0525;H01M10/0587 主分类号 H01M4/64
代理机构 McGinn IP Law Group, PLLC 代理人 McGinn IP Law Group, PLLC
主权项 1. An electrode for an electricity-storing device, the electrode comprising: a current collector foil; an active material layer formed on at least one surface of the current collector foil; and an electrical resistance layer formed on the at least one surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer, wherein at least a portion of an interface between the active material layer and the electrical resistance layer comprises a mixed phase where constituents from the active material layer and the electrical resistance layer intermingle, wherein a concentration of an element in the mixed phase decreases in a direction that is perpendicular to the interface and toward the current collector foil, wherein the electrical resistance layer comprises inorganic particles in a binder, the inorganic particles having a primary particle diameter median value in a range from 1 nm to 200 nm, and wherein the concentration of the element in the mixed phase is intermediate between a concentration of the element in the electrical resistance layer and a concentration of the element in the active material layer.
地址 Kyoto-shi, Kyoto JP