发明名称 Embedded test structure for trimming process control
摘要 In some embodiments, a method of controlling a photoresist trimming process in a semiconductor manufacturing process may include forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer having a first pattern to be etched into the first surface of the substrate, and an upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.
申请公布号 US8956886(B2) 申请公布日期 2015.02.17
申请号 US201414204668 申请日期 2014.03.11
申请人 Applied Materials, Inc. 发明人 Banna Samer;Joubert Olivier;Lian Lei;Darnon Maxime;Posseme Nicolas;Vallier Laurent
分类号 H01L21/00;H01L21/66;H01L21/311;H01L21/027;H01L21/67;H01L21/308;H01L21/3213;G03F7/20 主分类号 H01L21/00
代理机构 Moser Taboada 代理人 Moser Taboada ;Taboada Alan
主权项 1. A method for controlling a photoresist trimming process in a semiconductor manufacturing process, comprising: forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer formed atop the first surface of the substrate and having a first pattern to be etched into the first surface of the substrate, andan upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.
地址 Santa Clara CA US