| 发明名称 | Memory cell flipping for mitigating SRAM BTI | ||
| 摘要 | An apparatus may comprise a memory cell configured to operate according to a voltage mode, a voltage controller coupled with the memory cell, wherein the voltage controller is configured to change the voltage mode of the memory cell between a low voltage mode and a high voltage mode, and a memory controller module coupled with the memory cell, wherein the memory controller is configured to invert a logic state stored in the memory cell based on the voltage mode. | ||
| 申请公布号 | US8958236(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201313749672 | 申请日期 | 2013.01.24 |
| 申请人 | Advanced Micro Devices, Inc. | 发明人 | Wuu John J.;Kasprak Keith A.;Schreiber Russell |
| 分类号 | G11C7/00;G11C11/412;G11C7/04 | 主分类号 | G11C7/00 |
| 代理机构 | Liang & Cheng, PC | 代理人 | Liang & Cheng, PC |
| 主权项 | 1. An apparatus, comprising: a memory cell configured to operate according to a voltage mode; a voltage controller coupled with the memory cell, wherein the voltage controller is configured to change the voltage mode of the memory cell between a low voltage mode and a high voltage mode, wherein during operation in the low voltage mode a first logic state in the memory cell corresponds to a low voltage and a second logic state in the memory cell corresponds to a low operating voltage that is higher than the low voltage, and wherein during operation in the high voltage mode the second logic state corresponds to a high operating voltage that is higher than the low operating voltage; and a memory controller module coupled with the memory cell, wherein the memory controller is configured to invert a logic state stored in the memory cell based on the voltage mode. | ||
| 地址 | Sunnyvale CA US | ||