| 发明名称 | Mounted structure | ||
| 摘要 | A mounted structure includes an electrode of a substrate, an electrode of a semiconductor element, and a mounted layers for bonding the electrode of the substrate and the electrode of the semiconductor element, and the mounted layers includes: a first intermetallic compound layer containing a CuSn-based intermetallic compound; a Bi layer; a second intermetallic compound layer containing a CuSn-based intermetallic compound; a Cu layer; and a third intermetallic compound layer containing a CuSn-based intermetallic compound, and the above layers are sequentially arranged from the electrode of the substrate toward the electrode of the semiconductor element to configure the mounted layers. | ||
| 申请公布号 | US8957521(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201214114337 | 申请日期 | 2012.12.26 |
| 申请人 | Panasonic Intellectual Property Management Co., Ltd. | 发明人 | Nakamura Taichi;Kitaura Hidetoshi |
| 分类号 | H01L23/12;H01L23/52;H01L29/40;H01L23/00;B23K35/02;B23K35/22;H01L23/488;H01L23/492;B23K35/26;B23K35/30;H01L23/495 | 主分类号 | H01L23/12 |
| 代理机构 | Wenderoth, Lind & Ponack, L.L.P. | 代理人 | Wenderoth, Lind & Ponack, L.L.P. |
| 主权项 | 1. A mounted structure comprising: an electrode of a substrate; an electrode of a semiconductor element; and a mounted layers that bonds the electrode of the substrate and the electrode of the semiconductor element, wherein the mounted layers includes along a direction from the substrate toward the semiconductor element: a first intermetallic compound layer containing a CuSn-based intermetallic compound;a Bi layer;a second intermetallic compound layer containing a CuSn-based intermetallic compound;a Cu layer; anda third intermetallic compound layer containing a CuSn-based intermetallic compound. | ||
| 地址 | Osaka JP | ||