| 摘要 |
<p>The present invention provides a vertical power device that includes a channel region which has a 2D electronic gas (2DEG), a gate which is formed on the upper side of the channel region, a source which is formed on the upper side of the channel region to be separated from the gate, a drift region which is formed on the lower side of the channel region and is formed on the lower side corresponding to the gate except the lower side corresponding to the source, and a drain which is formed on the lower side of the drift region. Also, the present invention provides a method for manufacturing the vertical power device which includes the steps of forming an etch stop layer on the upper side of a drift region forming layer; forming the channel region on the upper side of the etch stop layer; and etching the drift region forming layer to form a trench between the drift region formed on the lower side corresponding to the gate and the region which is formed on the lower side corresponding to the source for separating the drift region from the region which is formed on the lower side corresponding to the source.</p> |
