Semiconductor device production method and rinse

摘要

The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower.

主权项

1. A semiconductor device production method, the method comprising:
a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower, wherein the resin having a cationic functional group is selected from the group consisting of polyethyleneimine, polyallylamine, polydiallyldimethylammonium, polyvinylpyridine , polylysine, polymethylpyridylvinyl, protonated poly(p-pyridyl vinylene), and derivatives thereof.