| 发明名称 |
Method of manufacturing a semiconductor device with two monocrystalline layers |
| 摘要 |
A method of manufacturing a semiconductor wafer, the method including: providing a first monocrystalline layer including semiconductor regions defined by a first lithography step; then overlaying the first monocrystalline layer with an isolation layer; preparing a second monocrystalline layer, after the first monocrystalline layer has been formed; transferring the second monocrystalline layer overlying the isolation layer; and then performing a second lithography step patterning portions of the first monocrystalline layer as part of forming at least one transistor in the first monocrystalline layer. |
| 申请公布号 |
US8956959(B2) |
申请公布日期 |
2015.02.17 |
| 申请号 |
US201113246157 |
申请日期 |
2011.09.27 |
| 申请人 |
Monolithic 3D Inc. |
发明人 |
Sekar Deepak C.;Or-Bach Zvi |
| 分类号 |
H01L21/20;H01L21/84;H01L21/268;H01L21/683;H01L21/762;H01L21/822;H01L27/06;H01L27/108;H01L27/11;H01L27/115;H01L27/12;H01L27/22;H01L27/24;H01L29/78;H01L27/105;H01L45/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor wafer, the method comprising a sequence of steps comprising:
providing a first monocrystalline layer; patterning said first monocrytalline layer; overlaying said first monocrystalline layer with an isolation layer; preparing a second monocrystalline layer, after said first monocrystalline layer has been formed; transferring said second monocrystalline layer using ion-cut, said second monocrystalline layer overlying said isolation layer; and after transferring said second monocrystalline layer, etching portions of said first monocrystalline layer as part of forming at least one transistor in said first monocrystalline layer. |
| 地址 |
San Jose CA US |
