| 发明名称 | Method for manufacturing compound semiconductor device | ||
| 摘要 | A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein the gate electrode includes a gate base portion on the gate insulating film and a gate umbrella portion, and a surface of the gate umbrella portion includes a Schottky contact with the compound semiconductor multilayer structure. | ||
| 申请公布号 | US8956935(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201414224524 | 申请日期 | 2014.03.25 |
| 申请人 | Fujitsu Limited | 发明人 | Kurahashi Naoko |
| 分类号 | H01L21/338;H01L21/335;H01L29/66;H01L29/423;H01L29/778;H03F1/32;H01L29/20;H01L29/40 | 主分类号 | H01L21/338 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A method for manufacturing a compound semiconductor device, comprising: forming a gate insulating film on a compound semiconductor multilayer structure; forming an opening on the gate insulating film to expose a part of a surface of the compound semiconductor multilayer structure, wherein said opening is surrounded by a vertical sidewall of said gate insulating film; and forming a gate electrode, which include a gate base portion and a gate umbrella portion, on the gate insulating film so that a surface of the gate umbrella portion includes a Schottky contact with the compound semiconductor multilayer structure in the opening and an entire surface of the gate base portion is in contact with the compound semiconductor multilayer structure indirectly so as to be the gate insulating film between the entire surface and the compound semiconductor multilayer structure. | ||
| 地址 | Kawasaki JP | ||