发明名称 Microwave plasma reactor for manufacturing synthetic diamond material
摘要 A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms (26) extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber.
申请公布号 US8955456(B2) 申请公布日期 2015.02.17
申请号 US201113994836 申请日期 2011.12.14
申请人 Element Six Limited 发明人 Cullen Alexander Lamb;Dodson Joseph Michael;Williams Stephen David;Brandon John Robert
分类号 H01J37/00;H01J37/32;C23C16/27;C23C16/511;C23C16/00 主分类号 H01J37/00
代理机构 Bryan Cave LLP 代理人 Bryan Cave LLP
主权项 1. A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window formed in one or several sections; a coaxial waveguide having a central inner conductor and an outer conductor for feeding microwaves to the annular dielectric window; and a waveguide plate comprising a plurality of apertures disposed in an annular configuration with a plurality of arms extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber; wherein the plurality of arms define one or more channels for supplying coolant and/or process gas, wherein the one or more channels comprise at least one channel configured to supply process gas to one or more injection ports arranged opposite the substrate holder for injecting process gas towards the substrate holder, wherein the waveguide plate comprises a central portion which extends across the plasma chamber and is supported by the plurality of arms extending between the apertures, and wherein the central inner conductor of the coaxial waveguide forms a floating conductor supported by the central portion of the waveguide plate.
地址 Ballasalla IM