| 摘要 |
An objective of the present invention is to provide a silicon wafer which is capable of controlling slip dislocations during heat treatment in a process of manufacturing a semiconductor device; which has less crystal defects, such as COPs and oxygen precipitation nuclei, in the region where a semiconductor device is to be manufactured; and in which oxygen precipitation nuclei in the bulk portion are distributed uniformly in the radial direction of the surface of the wafer, and to a method of manufacturing the same. The silicon wafer is manufactured by subjecting a silicon wafer sliced from a silicon single-crystal ingot grown by the Czochralski process to a rapid thermal process in which the silicon wafer is heated to the maximum temperature in a range of 1,300 to 1,380°C, and kept at the maximum temperature for 5 to 60 seconds; and removing a surface layer (1) of the wafer where a semiconductor device is to be manufactured by a thickness of X [μm] or more which is calculated according to the following equations (1) to (3): (1) X[μm]=a[μm]+b[μm]; (2) a[μm]=(0.0031×(said maximum temperature)[°C]−3.1)×6.4×(cooling rate)−0.4[°C/second]; and (3) b[μm]=a/(solid solubility limit of oxygen) [atoms/cm^3]/(oxygen concentration in substrate) [atoms/cm^3]. |
