| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of improving light reception sensitivity without thinning a light shielding part, and a manufacturing method of the solid-state imaging apparatus.SOLUTION: A solid-state imaging apparatus is provided. The solid-state imaging apparatus comprises a semiconductor layer and a light shielding part. A plurality of photoelectric conversion elements are arranged in a two-dimensional array shape. The light shielding part is provided within the semiconductor layer and includes a light shielding member of which the interface with the semiconductor layer is covered with an insulation film. Further, the light shielding part includes a light shielding region and an element separation region. The light shielding region is provided closer to a light receiving surface of the photoelectric conversion element inside of the semiconductor layer and shields light incident to the photoelectric conversion element in a specific direction. The element separation region is provided protrusively from the light shielding region to the plurality of photoelectric conversion elements in a depth direction of the semiconductor layer for electro-optically separating the plurality of photoelectric conversion elements.</p> |
