发明名称 MEMBER FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a member for manufacturing a semiconductor device, which is applicable to a three-dimensional semiconductor fabrication that requires fine processing and high density, and to provide a method for manufacturing a semiconductor device with sufficiently high efficiency at a low cost by using the above member.SOLUTION: The method for manufacturing a semiconductor device includes steps of: forming a temporary fixing layer 2 on a support body 1; forming a metal layer on the temporary fixing layer 2; forming a photosensitive resin layer on the metal layer and then subjecting the photosensitive layer to exposure and development to form a pattern of the photosensitive resin to expose a part of the metal layer; removing a part of the metal layer by etching to expose a part of the temporary fixing layer 2; fixing a semiconductor element on the temporary fixing layer 2 so as to bond an active surface of the semiconductor to the temporary fixing layer 2; encapsulating these layers with an encapsulation resin so as to cover at least a part of the semiconductor element; removing at least a part of the encapsulation resin to expose a part 3a of the metal layer; removing the support body 1; removing the temporary fixing layer 2; and forming a rewiring layer on a face where the temporary fixing layer 2 is removed.</p>
申请公布号 JP2015032732(A) 申请公布日期 2015.02.16
申请号 JP20130162278 申请日期 2013.08.05
申请人 HITACHI CHEMICAL CO LTD 发明人 KURABUCHI KAZUHIKO;TOBA MASAYA;HAMAGUCHI KOJI;MAKINO TATSUYA;FUJIMOTO DAISUKE;MURAI HIKARI;NAGOSHI TOSHIMASA
分类号 H01L23/12 主分类号 H01L23/12
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